Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
2015 (Engelska)Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, nr 25Artikel i tidskrift (Refereegranskat) Published
Resurstyp
Text
Abstract [en]

The carbon vacancy (VC) is a major point defect in high-purity 4H-SiC epitaxial layers limiting the minority charge carrier lifetime. In layers grown by chemical vapor deposition techniques, the VC concentration is typically in the range of 1012cm-3, and after device processing at temperatures approaching 2000 °C, it can be enhanced by several orders of magnitude. In the present study, both as-grown layers and a high-temperature processed one have been annealed at 1500 °C and the VC concentration is demonstrated to be strongly reduced, exhibiting a value of only a few times 1011cm-3 as determined by deep-level transient spectroscopy measurements. The value is reached already after annealing times on the order of 1 h and is evidenced to reflect thermodynamic equilibrium under C-rich ambient conditions. The physical processes controlling the kinetics for establishment of the VC equilibrium are estimated to have an activation energy below ∼3 eV and both in-diffusion of carbon interstitials and out-diffusion of VC’s are discussed as candidates. This concept of VC elimination is flexible and readily integrated in a materials and device processing sequence.

Ort, förlag, år, upplaga, sidor
American Institute of Physics (AIP), 2015. Vol. 107, nr 25
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-181817DOI: 10.1063/1.4938242ISI: 000368442100019Scopus ID: 2-s2.0-84953309501OAI: oai:DiVA.org:kth-181817DiVA, id: diva2:901577
Anmärkning

QC 20160208. QC 20160216

Tillgänglig från: 2016-02-08 Skapad: 2016-02-05 Senast uppdaterad: 2017-11-30Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextScopus

Personposter BETA

Hallén, Anders

Sök vidare i DiVA

Av författaren/redaktören
Hallén, Anders
Av organisationen
Integrerade komponenter och kretsar
I samma tidskrift
Applied Physics Letters
Den kondenserade materiens fysik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 190 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf