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Crack-defined electronic nanogaps
KTH, Skolan för elektro- och systemteknik (EES), Mikro- och nanosystemteknik.ORCID-id: 0000-0001-6731-3886
KTH, Skolan för elektro- och systemteknik (EES), Mikro- och nanosystemteknik.ORCID-id: 0000-0002-0525-8647
KTH, Skolan för elektro- och systemteknik (EES), Mikro- och nanosystemteknik.ORCID-id: 0000-0001-9552-4234
2016 (engelsk)Inngår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 28, nr 11, s. 2178-2182Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Achieving near-atomic-scale electronic nanogaps in a reliable and scalable manner will facilitate fundamental advances in molecular detection, plasmonics, and nanoelectronics. Here, a method is shown for realizing crack-defined nanogaps separating TiN electrodes, allowing parallel and scalable fabrication of arrays of sub-10 nm electronic nanogaps featuring individually defined gap widths.

sted, utgiver, år, opplag, sider
Wiley-VCH Verlagsgesellschaft, 2016. Vol. 28, nr 11, s. 2178-2182
Emneord [en]
nanogap electrodes, nanogaps, electrodes, junctions, arrays, crack-junctions, tunnel junctions, tunneling, electronic transport, molecular electronics, nanoplasmonics, parallel fabrication, wafer-scale, large-scale
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-182341DOI: 10.1002/adma.201504569ISI: 000372459000007PubMedID: 26784270Scopus ID: 2-s2.0-84960233693OAI: oai:DiVA.org:kth-182341DiVA, id: diva2:904218
Forskningsfinansiär
EU, European Research Council, 267528 , 277879
Merknad

QC 20160304

Tilgjengelig fra: 2016-02-18 Laget: 2016-02-18 Sist oppdatert: 2018-05-22bibliografisk kontrollert
Inngår i avhandling
1. Crack-junctions: Bridging the gap between nano electronics and giga manufacturing
Åpne denne publikasjonen i ny fane eller vindu >>Crack-junctions: Bridging the gap between nano electronics and giga manufacturing
2018 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Obtaining both nanometer precision of patterning and parallel fabrication on wafer-scale is currently not possible in conventional fabrication schemes. Just as we are looking beyond semiconductor technologies for next-generation electronics and photonics, our efforts turn to new ways of producing electronic and photonic interfaces with the nanoscale. Nanogap electrodes, with their accessible free-space and connection to electronic circuits, have attracted a lot of attention recently as scaffolds to study, sense, or harness the smallest stable structures found in nature: molecules. The main achievement of this thesis is the development of a novel type of nanogap electrodes, the so called crack-junction (CJ). Crack-junctions are unparalleled at realizing nanogap widths smaller than 10 nm and can be fabricated based exclusively on conventional wafer-scale microfabrication equipment and processes. These characteristics of crack-junctions stem from the sequence of two entirely self-induced steps participating in the formation of the nanogaps: 1./ a splitting step, during which a pre-strained electrode-bridge structure fractures to generate two new electrode surfaces facing one another, followed by 2./ a dividing step during which mechanical relaxation of the elastic strain induces displacement of these surfaces away from one another in a precisely controlled way. The positions of the resulting nanogaps are precisely controlled by designing the electrode-bridges with notched constrictions that localize crack formation. Based on the crack-junction methodology, two continuation concepts are developed and demonstrated. In the first concept, the crack-junction methodology is extended to electrode materials that are ductile, rather than brittle. This led to the development of a new type of break junction, the so called crack-defined break junction (CDBJ). In the second concept, the crack-defined nanogap structures realized by the crack-junction methodology are utilized as a shadow mask for the fabrication of single nanowire devices. The optical-lithography-compatible processes developed here to produce high-density arrays of individually-adjusted crack-junctions, crack-defined break junctions, and single-nanowire devices, provide viable solutions to bridge 10−9 nanoelectronics and 109 giga manufacturing.

sted, utgiver, år, opplag, sider
KTH Royal Institute of Technology, 2018. s. 92
Serie
TRITA-EECS-AVL ; 2018:42
Emneord
nanotechnology, nanoelectronics, nanogap electrodes, molecular electronics, nanoplasmonics, crack-junctions, break junctions, nanowires, parallel fabrication, lithography, fracture, crack
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-228316 (URN)978-91-7729-795-6 (ISBN)
Disputas
2018-06-15, Q2, Osquldas väg 10, Stockholm, 10:00 (engelsk)
Opponent
Veileder
Merknad

QC 20180522

Tilgjengelig fra: 2018-05-22 Laget: 2018-05-21 Sist oppdatert: 2018-05-22bibliografisk kontrollert

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