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Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-3802-7834
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-8108-2631
2016 (engelsk)Inngår i: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 37, nr 2, s. 146-149Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 degrees C to 500 degrees C. The three BGVRs are functional and exhibit 46 ppm/degrees C, 131 ppm/degrees C, and 120 ppm/degrees C output voltage variations from 25 degrees C up to 500 degrees C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.

sted, utgiver, år, opplag, sider
IEEE , 2016. Vol. 37, nr 2, s. 146-149
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
URN: urn:nbn:se:kth:diva-183118DOI: 10.1109/LED.2015.2508064ISI: 000370432000005Scopus ID: 2-s2.0-84962019543OAI: oai:DiVA.org:kth-183118DiVA, id: diva2:907859
Prosjekter
HOTSiC
Forskningsfinansiär
Swedish Foundation for Strategic Research
Merknad

QC 20160311

Tilgjengelig fra: 2016-02-29 Laget: 2016-02-29 Sist oppdatert: 2017-11-30bibliografisk kontrollert
Inngår i avhandling
1. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
Åpne denne publikasjonen i ny fane eller vindu >>High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
2017 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. In fact, Si-based ICs have a limited maximum operating temperature which is around 300 °C for silicon on insulator (SOI). Owing to its superior material properties such as wide bandgap, three times larger than Silicon, and low intrinsic carrier concentration, SiC is an excellent candidate for high-temperature applications. In this thesis, analog and mixed-signal circuits have been implemented using SiC bipolar technology, including bandgap references, amplifiers, a master-slave comparator, an 8-bit R-2R ladder-based digital-to-analog converter (DAC), a 4-bit flash analog-to-digital converter (ADC), and a 10-bit successive-approximation-register (SAR) ADC. Spice models were developed at binned temperature points from room temperature to 500 °C, to simulate and predict the circuits’ behavior with temperature variation. The high-temperature performance of the fabricated chips has been investigated and verified over a wide temperature range from 25 °C to 500 °C. A stable gain of 39 dB was measured in the temperature range from 25 °C up to 500 °C for the inverting operational amplifier with ideal closed-loop gain of 40 dB. Although the circuit design in an immature SiC bipolar technology is challenging due to the low current gain of the transistors and lack of complete AC models, various circuit techniques have been applied to mitigate these problems. This thesis details the challenges faced and methods employed for device modeling, integrated circuit design, layout implementation and finally performance verification using on-wafer characterization of the fabricated SiC ICs over a wide temperature range.

sted, utgiver, år, opplag, sider
KTH Royal Institute of Technology, 2017. s. 107
Serie
TRITA-ICT ; 2017:16
Emneord
silicon carbide (SiC), bipolar junction transistor (BJT), high temperature, SiC integrated circuit, Spice Gummel-Poon (SGP), operational amplifier (opamp), negative feedback amplifier, bandgap reference, masterslave comparator, digital-to-analog converter (DAC), analog-to-digital converter (ADC), flash ADC, successive approximation register (SAR) ADC
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-213697 (URN)978-91-7729-496-2 (ISBN)
Disputas
2017-09-29, Ka-Sal A (Sal Östen Mäkitalo), Kistagången 16, Kista, Stockholm, 13:00 (engelsk)
Opponent
Veileder
Forskningsfinansiär
Swedish Foundation for Strategic Research
Merknad

QC 20170905

Tilgjengelig fra: 2017-09-05 Laget: 2017-09-05 Sist oppdatert: 2017-09-18bibliografisk kontrollert

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Wide Temperature Range Integrated Bandgap Voltage References in 4H-SiC(1165 kB)242 nedlastinger
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