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Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0001-6184-6470
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0003-0570-9599
KTH, Skolan för elektro- och systemteknik (EES), Elektroteknisk teori och konstruktion.ORCID-id: 0000-0002-2964-7233
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0002-1755-1365
2016 (Engelska)Ingår i: IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, E-ISSN 2168-6785, Vol. 4, nr 3, s. 996-1006Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Silicon carbide as an emerging technology offers potential benefits compared with the currently used silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reduce the losses. Furthermore, increasing the amount of components such as parallel connection of devices introduces an undesired tradeoff between efficiency and reliability, since an increased component count increases the probability of failure. A reliability analysis has been performed on a three-phase inverter rated at 312 kVA, using parallel-connected power modules. This analysis shows that the gate voltage stress has a high impact on the reliability of the complete system. Decreasing the positive gate-source voltage could, therefore, increase the reliability of the system approximately three times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure by approximately five times.

Ort, förlag, år, upplaga, sidor
IEEE , 2016. Vol. 4, nr 3, s. 996-1006
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-192621DOI: 10.1109/JESTPE.2016.2551980ISI: 000381441600031Scopus ID: 2-s2.0-84982863318OAI: oai:DiVA.org:kth-192621DiVA, id: diva2:971362
Anmärkning

QC 20160920

Tillgänglig från: 2016-09-16 Skapad: 2016-09-16 Senast uppdaterad: 2017-11-21Bibliografiskt granskad
Ingår i avhandling
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Öppna denna publikation i ny flik eller fönster >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH Royal Institute of Technology, 2016. s. 101
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:145
Nyckelord
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
Nationell ämneskategori
Annan elektroteknik och elektronik
Forskningsämne
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Disputation
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (Engelska)
Opponent
Handledare
Anmärkning

QC 20160922

Tillgänglig från: 2016-09-22 Skapad: 2016-09-16 Senast uppdaterad: 2020-01-22Bibliografiskt granskad

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Colmenares, JuanSadik, Diane-PerleHilber, PatrikNee, Hans-Peter
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