Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0001-6184-6470
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0003-0570-9599
KTH, Skolan för elektro- och systemteknik (EES), Elektroteknisk teori och konstruktion.ORCID-id: 0000-0002-2964-7233
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0002-1755-1365
2016 (engelsk)Inngår i: IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, E-ISSN 2168-6785, Vol. 4, nr 3, s. 996-1006Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Silicon carbide as an emerging technology offers potential benefits compared with the currently used silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reduce the losses. Furthermore, increasing the amount of components such as parallel connection of devices introduces an undesired tradeoff between efficiency and reliability, since an increased component count increases the probability of failure. A reliability analysis has been performed on a three-phase inverter rated at 312 kVA, using parallel-connected power modules. This analysis shows that the gate voltage stress has a high impact on the reliability of the complete system. Decreasing the positive gate-source voltage could, therefore, increase the reliability of the system approximately three times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure by approximately five times.

sted, utgiver, år, opplag, sider
IEEE , 2016. Vol. 4, nr 3, s. 996-1006
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-192621DOI: 10.1109/JESTPE.2016.2551980ISI: 000381441600031Scopus ID: 2-s2.0-84982863318OAI: oai:DiVA.org:kth-192621DiVA, id: diva2:971362
Merknad

QC 20160920

Tilgjengelig fra: 2016-09-16 Laget: 2016-09-16 Sist oppdatert: 2017-11-21bibliografisk kontrollert
Inngår i avhandling
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Åpne denne publikasjonen i ny fane eller vindu >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2016. s. 101
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:145
Emneord
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Disputas
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (engelsk)
Opponent
Veileder
Merknad

QC 20160922

Tilgjengelig fra: 2016-09-22 Laget: 2016-09-16 Sist oppdatert: 2016-09-22bibliografisk kontrollert

Open Access i DiVA

fulltext(4544 kB)301 nedlastinger
Filinformasjon
Fil FULLTEXT01.pdfFilstørrelse 4544 kBChecksum SHA-512
46f09ed59d8784d3f24f5322e206a3edabb23e1524be9eb8ea38b2a4d12535d3fb624ceb433a650fbb5a21551ce95e6573ed938730b96b1ca2356f27c3855c31
Type fulltextMimetype application/pdf

Andre lenker

Forlagets fulltekstScopusPublishers webpage

Søk i DiVA

Av forfatter/redaktør
Colmenares, JuanSadik, Diane-PerleHilber, PatrikNee, Hans-Peter
Av organisasjonen
I samme tidsskrift
IEEE Journal of Emerging and Selected Topics in Power Electronics

Søk utenfor DiVA

GoogleGoogle Scholar
Totalt: 301 nedlastinger
Antall nedlastinger er summen av alle nedlastinger av alle fulltekster. Det kan for eksempel være tidligere versjoner som er ikke lenger tilgjengelige

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 355 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf