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Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0001-6184-6470
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0003-0570-9599
KTH, Skolan för elektro- och systemteknik (EES), Elektroteknisk teori och konstruktion.ORCID-id: 0000-0002-2964-7233
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0002-1755-1365
2016 (engelsk)Inngår i: 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Institute of Electrical and Electronics Engineers (IEEE), 2016, s. 746-753, artikkel-id 7467955Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired tradeoff between efficiency and reliability. A reliability analysis has been performed on a three-phase inverter for motor drive applications rated at 312 kVA. This analysis has shown that the gate voltage stress determines the reliability of the complete system. Nevertheless, decreasing the positive gate-source voltage could increase the reliability of the system approximately 8 times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure approximately 5 times.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2016. s. 746-753, artikkel-id 7467955
Serie
Annual IEEE Applied Power Electronics Conference and Exposition (APEC), ISSN 1048-2334
Emneord [en]
Inveter, Markov Chain, Motor Drive Application, Power Modules, Reliability, SiC, Silicon Carbide, Voltage Source Conveter
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-192622DOI: 10.1109/APEC.2016.7467955ISI: 000388127300112Scopus ID: 2-s2.0-84973614823ISBN: 978-1-4673-9550-2 (tryckt)OAI: oai:DiVA.org:kth-192622DiVA, id: diva2:971366
Konferanse
31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016, Long Beach Convention and Entertainment CenterLong Beach, United States, 20 March 2016 through 24 March 2016
Merknad

QC 20160921

Tilgjengelig fra: 2016-09-16 Laget: 2016-09-16 Sist oppdatert: 2017-01-09bibliografisk kontrollert
Inngår i avhandling
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Åpne denne publikasjonen i ny fane eller vindu >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2016. s. 101
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:145
Emneord
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Disputas
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (engelsk)
Opponent
Veileder
Merknad

QC 20160922

Tilgjengelig fra: 2016-09-22 Laget: 2016-09-16 Sist oppdatert: 2016-09-22bibliografisk kontrollert

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