Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Experimental Evaluation of a 1 kW, Single-Phase, 3-LevelGaN Inverter at Extreme Cold Environments
KTH, Skolan för elektro- och systemteknik (EES), Elkraftteknik.ORCID-id: 0000-0001-6184-6470
University of Illinois at Urbana-Champaign.
University of Illinois at Urbana-Champaign.
University of Illinois at Urbana-Champaign.
Visa övriga samt affilieringar
(Engelska)Manuskript (preprint) (Övrigt vetenskapligt)
Abstract [en]

Low temperature of operation of power electronics applications enables higher efficiencies and higher reliability. Moreover, combining lower temperature of operation with rapidly maturing wide-bandgap semiconductors materials, such as gallium-nitride, could facilitate higher power density designs. In this study, the low temperature performance of a 1 kW single phase, 3-level GaN inverter has been evaluated. A 33% reduction in the losses was measured during rated operation at -75 °C. To show the impact of temperature on the power loss breakdown, a comparison of the estimated and measured losses has been performed.

Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-192624OAI: oai:DiVA.org:kth-192624DiVA, id: diva2:971370
Anmärkning

QC 20160921

Tillgänglig från: 2016-09-16 Skapad: 2016-09-16 Senast uppdaterad: 2016-09-21Bibliografiskt granskad
Ingår i avhandling
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Öppna denna publikation i ny flik eller fönster >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH Royal Institute of Technology, 2016. s. 101
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:145
Nyckelord
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
Nationell ämneskategori
Annan elektroteknik och elektronik
Forskningsämne
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Disputation
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (Engelska)
Opponent
Handledare
Anmärkning

QC 20160922

Tillgänglig från: 2016-09-22 Skapad: 2016-09-16 Senast uppdaterad: 2020-01-22Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Sök vidare i DiVA

Av författaren/redaktören
Colmenares, Juan
Av organisationen
Elkraftteknik
Annan elektroteknik och elektronik

Sök vidare utanför DiVA

GoogleGoogle Scholar

urn-nbn

Altmetricpoäng

urn-nbn
Totalt: 371 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf