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Atomically resolved microscopy of ion implantation induced dislocation loops in 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
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2016 (English)In: Materials letters (General ed.), ISSN 0167-577X, E-ISSN 1873-4979, Vol. 181, 325-327 p.Article in journal (Refereed) Published
Abstract [en]

During high temperature electrical activation of ion-implanted dopant species in SiC, extrinsic dislocation loops are formed on the basal planes of the SiC lattice. Investigations have suggested Si-based loops are caused in accordance with the well-known +1 model. Herein we apply aberration corrected STEM to resolve the atomic structure of these loops. It is shown that the dislocation loops formed during annealing of Al-implanted SiC consist of an extra inserted Si-C bilayer of the (0001) polar sense, which upon insertion into the lattice causes a local extrinsic stacking fault. The +1 model thus needs to be expanded for binary systems. (C) 2016 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 181, 325-327 p.
Keyword [en]
Ion implantation, HRSTEM, Dislocation loop, Silicon carbide
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-193157DOI: 10.1016/j.matlet.2016.06.013ISI: 000381540100080Scopus ID: 2-s2.0-84975789800OAI: oai:DiVA.org:kth-193157DiVA: diva2:1033638
Note

QC 20161007

Available from: 2016-10-07 Created: 2016-09-30 Last updated: 2017-11-30Bibliographically approved

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