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Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14 nm node FinFETs
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2016 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 124, 10-15 p.Article in journal (Refereed) Published
Abstract [en]

A complete mapping of 14 nm FinFETs performance over 200 mm wafers was performed and the pattern dependency of SiGe selective growth was calculated using an empirical kinetic molecule model for the reactant precursors. The transistor structures were analyzed by conventional characterization tools and their performance was simulated by considering the process related variations. The applied model presents for the first time a powerful tool for transistor community to predict the SiGe profile and strain modulating over a processed wafer, independent of wafer size.

Place, publisher, year, edition, pages
Elsevier, 2016. Vol. 124, 10-15 p.
Keyword [en]
Pattern dependency, SiGe, EPI, FinFET, 14 nm
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-193165DOI: 10.1016/j.sse.2016.07.024ISI: 000382252000003ScopusID: 2-s2.0-84979642313OAI: diva2:1037185

QC 20161014

Available from: 2016-10-14 Created: 2016-09-30 Last updated: 2016-10-14Bibliographically approved

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Radamson, Henry H.
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Integrated Devices and Circuits
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