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Sensing Characteristics of Phosphorene Monolayers toward PH3 and AsH3 Gases upon the Introduction of Vacancy Defects
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics. Uppsala University, Sweden.
2016 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 120, no 36, 20428-20436 p.Article in journal (Refereed) Published
Abstract [en]

Motivated by the exceptional interest of researchers in two-dimensional nanostructures, the current study deals with the structural, electronic, optical, and gas sensing properties of recently synthesized monolayer phosphorene. Van der Waals induced first-principles calculations were performed to study the binding mechanism of pristine and defected phosphorene towards the toxic gases PH3 and AsH3. The preferential sites and orientations of these molecules on the phosphorene sheet were determined, and a detailed analysis of the adsorption energetics was performed. Both of the gas molecules interact weakly with the phosphorene sheet, with AsH3 the binding was slightly stronger than PH3. The creation of defects such as monovacancies and divacancies in the phosphorene sheet was found to significantly enhance the adsorption mechanism. The adsorption energies of both PH3 and AsH3 improved by factors of four and three, respectively, as compared to their values on pristine phosphorene. The adsorption mechanism was further investigated by plotting the band structure and density of states. We also studied the optical properties and the static dielectric matrices of these nanostructures using density functional perturbation theory. Our findings showed that defected phosphorene with vacancies can be considered as an efficient sensor for toxic gases.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2016. Vol. 120, no 36, 20428-20436 p.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-194270DOI: 10.1021/acs.jpcc.6b06791ISI: 000383641700058ScopusID: 2-s2.0-84987933153OAI: oai:DiVA.org:kth-194270DiVA: diva2:1039613
Note

QC 20161024

Available from: 2016-10-24 Created: 2016-10-21 Last updated: 2016-10-24Bibliographically approved

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Ahuja, Rajeev
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