Changes in luminescence intensities and carrier dynamics induced by proton irradiation in In_xGa_1-xAs/GaAs quantum dots
2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 66, no 23, 235314- p.Article in journal (Refereed) Published
The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between InGaAs/GaAs quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot structures varying in dot surface density (4x10(8)-3x10(10) cm(-2)) and substrate orientation [(100) and (311)B]. Similar trends were observed for all quantum dot samples. A slight increase in photoluminescence emission intensity after low to intermediate proton doses is observed in InGaAs/GaAs (100) quantum dot structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
Place, publisher, year, edition, pages
2002. Vol. 66, no 23, 235314- p.
enhanced radiation hardness, energy-relaxation, deep levels, damage, lasers, temperature, dependence, wells, gaas, degradation
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-5880DOI: 10.1103/PhysRevB.66.235314ISI: 000180279400081OAI: oai:DiVA.org:kth-5880DiVA: diva2:10407
QC 201009202006-06-012006-06-012010-09-20Bibliographically approved