Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
2002 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, no 9, 5826-5830 p.Article in journal (Refereed) Published
Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed InxGa1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found.
Place, publisher, year, edition, pages
2002. Vol. 91, no 9, 5826-5830 p.
MISFIT DISLOCATIONS, ISLANDS, SUPERLATTICES, TRANSITIONS, LASERS
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-5882DOI: 10.1063/1.1467963ISI: 000175069000044OAI: oai:DiVA.org:kth-5882DiVA: diva2:10409
QC 201009082006-06-012006-06-012010-09-08Bibliographically approved