A 500 degrees C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology
2016 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 63, no 9, 3445-3450 p.Article in journal (Refereed) Published
High-temperature integrated circuits provide important sensing and controlling functionality in extreme environments. Silicon carbide bipolar technology can operate beyond 500 degrees C and has shown stable operation in both digital and analog circuit applications. This paper demonstrates an 8-b digital-to-analog converter (DAC). The DAC is realized in a current steering R-2R configuration. High-gain Darlington current switches are used to ensure ideal switching at 500 degrees C. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) at 25 degrees C are 0.79 and 1.01 LSB, respectively, while at 500 degrees C, the DNL and INL are 4.7 and 2.5 LSB, respectively. In addition, the DAC achieves 53.6 and 40.6 dBc of spurious free dynamic range at 25 degrees C and 500 degrees C, respectively.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016. Vol. 63, no 9, 3445-3450 p.
Bipolar ICs, bipolar junction transistor (BJT), current steering R-2R digital-to-analog converter (DAC), high temperature, silicon carbide (SiC), Spice Gummel-Poon
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-194477DOI: 10.1109/TED.2016.2588418ISI: 000384574400011ScopusID: 2-s2.0-84979781492OAI: oai:DiVA.org:kth-194477DiVA: diva2:1040982
FunderSwedish Foundation for Strategic Research
QC 201610312016-10-312016-10-282016-11-01Bibliographically approved