Carrier recombination in aligned InAs/GaAs quantum dots grown in strain-relaxed InGaAs layers
2003 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 0, no 4, 1213- p.Article in journal (Refereed) Published
Alignment of InAs quantum dots was achieved by introducing misfit dislocations in a metastable InGaAs layer and subsequent annealing. Photoexcited carrier dynamics were studied using time-resolved photoluminescence. Comparison with control “non-aligned” InAs quantum dots show remarkable differences in integrated photoluminescence intensities with excitation power and photoluminescence decay time dependences on excitation intensities. Low-temperature carrier lifetimes were found to be below one hundred picoseconds for the aligned quantum dots and to be determined by non-radiative recombination processes. Samples with different barrier thicknesses between the InGaAs and the quantum dot layer allow the discussion of possible influences of carrier traps at InGaAs/GaAs interface and in the dot layer.
Place, publisher, year, edition, pages
2003. Vol. 0, no 4, 1213- p.
dislocations, heterostructures, temperature, wells, traps
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-5883DOI: 10.1002/pssc.200303046ISI: 000186108000031OAI: oai:DiVA.org:kth-5883DiVA: diva2:10410
QC 201009202006-06-012006-06-012010-09-20Bibliographically approved