Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers
2003 (English)In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 18, no 4, 541- p.Article in journal (Refereed) Published
Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-batched patterns induced by metastable InxGa1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control "nonaligned" InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.
Place, publisher, year, edition, pages
2003. Vol. 18, no 4, 541- p.
quantum dots, dislocations, lateral alignment, time-resolved photoluminescence
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-5884DOI: 10.1016/S1386-9477(03)00232-7ISI: 000183846300020OAI: oai:DiVA.org:kth-5884DiVA: diva2:10411
QC 201009202006-06-012006-06-012010-09-20Bibliographically approved