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Crossover temperature for quantum tunnelling in spin systems
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
2016 (English)In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 741, no 1, 012183Article in journal (Refereed) Published
Abstract [en]

We derive an analytical expression for the crossover temperature corresponding to the transition from classical activation mechanism to temperature assisted quantum tunnelling in spin systems. The crossover temperature depends on the magnetic configuration and Hessian at the first order saddle point on the energy surface of the system. The theory is applied to several single spin models, including a system with four-fold anisotropy. Good agreement is obtained with experimental results for a molecular magnet containing Mn4.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2016. Vol. 741, no 1, 012183
Keyword [en]
Electron tunneling, Manganese, Nanostructures, Optoelectronic devices, Spin dynamics, Activation mechanisms, Analytical expressions, Crossover temperature, Energy surface, Magnetic configuration, Molecular magnet, Quantum tunnelling, Saddle point, Photonics
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-195327DOI: 10.1088/1742-6596/741/1/012183ScopusID: 2-s2.0-84989333099OAI: diva2:1045409
28 March 2016 through 30 March 2016

QC 20161109

Available from: 2016-11-09 Created: 2016-11-02 Last updated: 2016-11-09Bibliographically approved

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Bessarab, Pavel F.
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