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A 500 °C monolithic SiC BJT latched comparator
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-1230-7133
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0003-3802-7834
KTH, School of Information and Communication Technology (ICT), Electronics, Integrated devices and circuits.ORCID iD: 0000-0001-8108-2631
2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, 921-924 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents a monolithic 4H-SiC BJT latched emitter-coupled logic (ECL) comparator for high temperature analog-to-digital conversion. The comparator consists of a low-gain pre-amplifier, a track and latch stage and an output buffer. For low-speed input signals, the comparator input offset voltage is 3.9 mV at 27 ºC and monotonically increases up to 9.1 mV at 500ºC. The single-ended output swing is 5.5 V at 27 ºC and 3.9 V at 500 ºC. The minimum comparison time is around 1 μs from 27 ºC to 500 ºC. The whole comparator dissipates 464 mW in average over the considered temperature range with a 15 V power supply. It consumes 2.25 × 0.84 mm2 chip area (with the bond pads included).

Place, publisher, year, edition, pages
Trans Tech Publications, 2016. Vol. 858, 921-924 p.
Keyword [en]
Silicon Carbide (SiC), ADC, High Temperature Integrated Circuit (IC), Bipolar Junction Transistor (BJT), Emitter-Coupled Logic (ECL), Spice Gummel-Poon (SGP), Latched Comparator
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
URN: urn:nbn:se:kth:diva-195397DOI: 10.4028/www.scientific.net/MSF.858.921Scopus ID: 2-s2.0-84971528829ISBN: 978-3-0357-1042-7 (print)OAI: oai:DiVA.org:kth-195397DiVA: diva2:1049010
Conference
16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 4 October 2015 through 9 October 2015
Projects
HOTSiC
Funder
Swedish Foundation for Strategic Research
Note

QC 20170908

Available from: 2016-11-23 Created: 2016-11-03 Last updated: 2017-09-08Bibliographically approved
In thesis
1. SiC Readout IC for High Temperature Seismic Sensor System
Open this publication in new window or tab >>SiC Readout IC for High Temperature Seismic Sensor System
2017 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar technology for high-temperature sensing applications are explored, in which the device performance variation over temperatures are considered. For this purpose, device modeling, circuit design, layout design, and device/circuit characterization are involved.

In this thesis, the circuits are fabricated in two batches using similar technologies. In Batch 1, the first SiC sigma-delta modulator is demonstrated to operate up to 500 °C with a 30 dB peak SNDR. Its building blocks including a fully-differential amplifier, an integrator and a comparator are characterized individually to investigate the modulator performance variation over temperatures. In the succeeding Batch 2, a SiC electromechanical sigma-delta modulator is designed with a chosen Si capacitive sensor for seismic sensing on Venus. Its building blocks including a charge amplifier, a multiplier and an oscillator are designed. Compared to Batch 1, a smaller transistor and two metal-interconnects are used to implement higher integration ICs in Batch 2. Moreover, the first VBIC-based compact model featured with continuous-temperature scalability from 27 to 500 °C is developed based on the SiC transistor in Batch 1, in order to optimize the design of circuits in Batch 2. The demonstrated performance of ICs in Batch 1 show the feasibility to further develop the SiC readout ICs for seismic sensor system operating on Venus.

Place, publisher, year, edition, pages
Stockholm, Sweden: KTH Royal Institute of Technology, 2017. 128 p.
Series
TRITA-ICT, 17
Keyword
Silicon carbide (SiC), bipolar junction transistor (BJT), integrated circuit (IC), sigma-delta (Σ∆), data conversion, operational amplifier(OpAmp), VBIC, SPICE Gummel-poon, high-temperature, electromechanical, accelerometer, capacitive sensor
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-213969 (URN)978-91-7729-498-6 (ISBN)
Public defence
2017-10-06, Ka-Sal A (Sal Östen Mäkitalo) KTH, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Funder
Swedish Foundation for Strategic Research , HOTSiCKnut and Alice Wallenberg Foundation, Working on Venus
Note

QC 20170911

Available from: 2017-09-11 Created: 2017-09-07 Last updated: 2017-09-11Bibliographically approved

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