A 500 ºC monolithic SiC BJT latched comparator
2016 (English)In: Materials Science Forum, Trans Tech Publications, 2016, Vol. 858, 921-924 p.Conference paper (Refereed)
This paper presents a monolithic 4H-SiC BJT latched emitter-coupled logic (ECL) comparator for high temperature analog-to-digital conversion. The comparator consists of a low-gain pre-amplifier, a track and latch stage and an output buffer. For low-speed input signals, the comparator input offset voltage is 3.9 mV at 27 ºC and monotonically increases up to 9.1 mV at 500ºC. The single-ended output swing is 5.5 V at 27 ºC and 3.9 V at 500 ºC. The minimum comparison time is around 1 μs from 27 ºC to 500 ºC. The whole comparator dissipates 464 mW in average over the considered temperature range with a 15 V power supply. It consumes 2.25 × 0.84 mm2 chip area (with the bond pads included).
Place, publisher, year, edition, pages
Trans Tech Publications, 2016. Vol. 858, 921-924 p.
Materials Science Forum, ISSN 0255-5476 ; 858
ADC, Bipolar (BJT), Emitter-coupled logic (ECL), High temperature integrated circuit (IC), Latched comparator, Silicon carbide (SiC), Spice Gummel-Poon (SGP)
Metallurgy and Metallic Materials
IdentifiersURN: urn:nbn:se:kth:diva-195397DOI: 10.4028/www.scientific.net/MSF.858.921ScopusID: 2-s2.0-84971528829ISBN: 978-303571042-7OAI: oai:DiVA.org:kth-195397DiVA: diva2:1049010
16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Sicily, Italy, 4 October 2015 through 9 October 2015
QC 201611232016-11-232016-11-032016-11-23Bibliographically approved