Solar driven energy conversion applications based on 3C-SiC
2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, 1028-1031 p.Conference paper (Refereed)
There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy. In this work, we explore 3C-SiC as an attractive material towards solar-driven energy conversion applications: (i) Boron doped 3C-SiC as candidate for an intermediate band photovoltaic material, and (ii) 3C-SiC as a photoelectrode for solar-driven water splitting. Absorption spectrum of boron doped 3C-SiC shows a deep energy level at ~0.7 eV above the valence band edge. This indicates that boron doped 3C-SiC may be a good candidate as an intermediate band photovoltaic material, and that bulk like 3C-SiC can have sufficient quality to be a promising electrode for photoelectrochemical water splitting.
Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2016. 1028-1031 p.
Cubic silicon carbide (3C-SiC), Photoelectrochemical (PEC) water splitting, Solar cell, Absorption spectroscopy, Electrochemistry, Energy conversion, Energy resources, Epitaxial growth, Photoelectrochemical cells, Renewable energy resources, Silicon, Solar cells, Solar energy, Solar power generation, Clean energy sources, Deep energy levels, Intermediate bands, Photoelectrochemical water splitting, Photovoltaic materials, Valence band edges, Water splitting, Silicon carbide
IdentifiersURN: urn:nbn:se:kth:diva-195530DOI: 10.4028/www.scientific.net/MSF.858.1028ScopusID: 2-s2.0-84971577103ISBN: 9783035710427OAI: oai:DiVA.org:kth-195530DiVA: diva2:1049627
4 October 2015 through 9 October 2015
QC 201611252016-11-252016-11-032016-11-25Bibliographically approved