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Geometrical effect dependency on the on-state characteristics in 5.6 kV 4H-SiC BJTs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT).
2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, 958-961 p.Conference paper (Refereed)
Abstract [en]

The influence of varying the emitter-base geometry, i.e., the emitter width (WE), emitter contact-emitter edge distance (Wn), and base contact-emitter edge (Wp) on the on-state characteristics in 5.6 kV implantation free 4H-SiC BJTs is investigated. The BJTs present a clear emitter size effect pointing out that surface recombination has a significant influence on current gain (β). The results show that the influence of varying Wp on the β is higher than Wn. A distance of 3 μm between emitter contact and base contact to the emitter edge (Wn = Wp = 3 μm) is the optimized value to have a BJT with a high β, and low on-resistance (RON) at a given WE.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2016. 958-961 p.
Keyword [en]
Bipolar junction transistor (BJT), Current density, Current gain, Implantation free, On-resistance, Silicon carbide (SiC), Bipolar transistors, Semiconductor junctions, Silicon, Silicon carbide, State estimation, Current gains, Emitter edges, Emitter-size effect, Geometrical effect, On currents, Silicon carbides (SiC), Surface recombinations, Power bipolar transistors
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-195482DOI: 10.4028/www.scientific.net/MSF.858.958ScopusID: 2-s2.0-84971525103ISBN: 9783035710427OAI: oai:DiVA.org:kth-195482DiVA: diva2:1049812
Conference
4 October 2015 through 9 October 2015
Note

QC 20161125

Available from: 2016-11-25 Created: 2016-11-03 Last updated: 2016-11-25Bibliographically approved

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Salemi, ArashElahipanah, HosseinZetterling, Carl-MikaelÖstling, Mikael
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Integrated Devices and CircuitsSchool of Information and Communication Technology (ICT)
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