Geometrical effect dependency on the on-state characteristics in 5.6 kV 4H-SiC BJTs
2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, 958-961 p.Conference paper (Refereed)
The influence of varying the emitter-base geometry, i.e., the emitter width (WE), emitter contact-emitter edge distance (Wn), and base contact-emitter edge (Wp) on the on-state characteristics in 5.6 kV implantation free 4H-SiC BJTs is investigated. The BJTs present a clear emitter size effect pointing out that surface recombination has a significant influence on current gain (β). The results show that the influence of varying Wp on the β is higher than Wn. A distance of 3 μm between emitter contact and base contact to the emitter edge (Wn = Wp = 3 μm) is the optimized value to have a BJT with a high β, and low on-resistance (RON) at a given WE.
Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2016. 958-961 p.
Bipolar junction transistor (BJT), Current density, Current gain, Implantation free, On-resistance, Silicon carbide (SiC), Bipolar transistors, Semiconductor junctions, Silicon, Silicon carbide, State estimation, Current gains, Emitter edges, Emitter-size effect, Geometrical effect, On currents, Silicon carbides (SiC), Surface recombinations, Power bipolar transistors
IdentifiersURN: urn:nbn:se:kth:diva-195482DOI: 10.4028/www.scientific.net/MSF.858.958ScopusID: 2-s2.0-84971525103ISBN: 9783035710427OAI: oai:DiVA.org:kth-195482DiVA: diva2:1049812
4 October 2015 through 9 October 2015
QC 201611252016-11-252016-11-032016-11-25Bibliographically approved