Alkali metal re-distribution after oxidation of 4H-SiC
2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, 677-680 p.Conference paper (Refereed)
Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n- and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 ºC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For ptype 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.
Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2016. 677-680 p.
Cesium, Diffusion, Oxidation, Potassium, SIMS, Sodium, Ion implantation, Mass spectrometry, Metals, Secondary ion mass spectrometry, Silicon oxides, Alkali atoms, Dry oxidation, Mass increase, P-type 4H-SiC, Re-distribution, SiC materials, Silicon carbide
IdentifiersURN: urn:nbn:se:kth:diva-195473DOI: 10.4028/www.scientific.net/MSF.858.677ScopusID: 2-s2.0-84971570725ISBN: 9783035710427OAI: oai:DiVA.org:kth-195473DiVA: diva2:1049827
4 October 2015 through 9 October 2015
QC 201611252016-11-252016-11-032016-11-25Bibliographically approved