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Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation
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2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, 864-867 p.Conference paper (Refereed)
Abstract [en]

Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2016. 864-867 p.
Keyword [en]
High gamma-ray radiation, High-temperature, SiC-nMOSFET, Characterization, Electric breakdown, MOSFET devices, Silicides, Silicon carbide, Threshold voltage, Field-effect mobilities, Gamma ray radiation, Gamma-ray exposure, Harsh environment, High temperature, NMOSFET, Temperature coefficient, Threshold voltage shifts, Gamma rays
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-195447DOI: 10.4028/www.scientific.net/MSF.858.864ScopusID: 2-s2.0-84971577076ISBN: 9783035710427OAI: oai:DiVA.org:kth-195447DiVA: diva2:1050258
Conference
4 October 2015 through 9 October 2015
Note

QC 20161128

Available from: 2016-11-28 Created: 2016-11-03 Last updated: 2016-11-28Bibliographically approved

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Östling, MikaelZetterling, Carl-Mikael
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