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4H-SiC nMOSFETs with As-Doped S/D and NbNi silicide ohmic contacts
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2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Trans Tech Publications Ltd , 2016, 573-576 p.Conference paper, Published paper (Refereed)
Abstract [en]

4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 105.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2016. 573-576 p.
Keyword [en]
Carbon aggregation, Harsh environment, nMOSFET, SiC, Carbon, Electric breakdown, Electric contactors, MOSFET devices, Ohmic contacts, Silicides, Threshold voltage, As-doped, Fabricated device, nMOSFETs, On/off ratio, Radiation hard, TCAD simulation, Silicon carbide
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-195420DOI: 10.4028/www.scientific.net/MSF.858.573Scopus ID: 2-s2.0-84971518958ISBN: 9783035710427 (print)OAI: oai:DiVA.org:kth-195420DiVA: diva2:1050326
Conference
4 October 2015 through 9 October 2015
Note

QC 20161128

Available from: 2016-11-28 Created: 2016-11-03 Last updated: 2016-11-28Bibliographically approved

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Östling, MikaelZetterling, Carl-Michael
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