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Engineering of electronic and optical properties of PbS thin films via Cu doping
KTH, School of Chemical Science and Engineering (CHE), Chemistry, Surface and Corrosion Science. LuleƄ Univ Technol.
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2016 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 97, 519-528 p.Article in journal (Refereed) Published
Abstract [en]

Copper-doped PbS polycrystalline thin films were deposited by chemical bath deposition by adding small amount of Cu (y(solution) = [Cu2+]/[Pb2+]) between 0.5 and 2 at%. The composition, structure, morphology, optical and electrical properties of the films were investigated by means of X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoemission spectroscopy (XPS), UV-visible near infrared (UV-Vis-NIR) spectrophotometry and Hall effect measurements. The XRD studies showed that the undoped films have PbS face centered cubic structure with (111) preferential orientation, while preferential orientation changes to (200) plane with increasing Cu doping concentration. The AFM and SEM measurements indicated that the film surfaces consisted of nanosized grains with pyramidal shape. Optical band gap was blue shifted from 0.72 eV to 1.69 eV with the increase in Cu doping concentration. The film obtained with the [Cu2+]/[Pb2+] ratio equal to 1.5 at% Cu showed the minimum resistivity of 0.16 Omega cm at room temperature and optimum value of optical band gap close to 1.5 eV. 1.5 at% Cu-doped PbS thin films exhibit the best optical and electrical properties, suitable for solar cells applications.

Place, publisher, year, edition, pages
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD , 2016. Vol. 97, 519-528 p.
Keyword [en]
Cu doped PbS films, Chemical bath deposition (CBD), Optical and electrical properties
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:kth:diva-196445DOI: 10.1016/j.spmi.2016.07.025ISI: 000385319200058ScopusID: 2-s2.0-84979544788OAI: oai:DiVA.org:kth-196445DiVA: diva2:1050487
Note

QC 20161129

Available from: 2016-11-29 Created: 2016-11-14 Last updated: 2016-11-29Bibliographically approved

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