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Morphology of tantalum nitride thin films grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS)
KTH, School of Electrical Engineering (EES), Space and Plasma Physics. University of Iceland, Iceland.ORCID iD: 0000-0002-8153-3209
2015 (English)In: Materials Research Society Symposium Proceedings, Materials Research Society, 2015, Vol. 1803, 21-26 p.Conference paper (Refereed)
Abstract [en]

Thin tantalum nitride films were grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS) while varying the fractional N2 flow rate at fixed substrate temperature of 400°C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces slightly less dense films than does dcMS and the surface roughness is similar for both the HiPIMS and dcMS grown films. The deposition rate for HiPIMS is up to 80 % lower than for dcMS but it can be roughly doubled by lowering the magnetic field strength by 30 %.

Place, publisher, year, edition, pages
Materials Research Society, 2015. Vol. 1803, 21-26 p.
Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1803
Keyword [en]
Characterization, Deposition rates, Magnetron sputtering, Nitrides, Quartz, Sputtering, Surface roughness, Tantalum, X ray diffraction, Conventional dc magnetron sputtering, Film properties, High power impulse magnetron sputtering (HIPIMS), Magnetic field strengths, Structural characterization, Substrate temperature, Tantalum nitrides, Tantalum-nitride film, Thin films
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-194685DOI: 10.1557/opl.2015.518ScopusID: 2-s2.0-84986000881ISBN: 9781510826564OAI: diva2:1050742
2015 MRS Spring Meeting, San Francisco, United States, 6 April 2015 through 10 April 2015

QC 20161130

Available from: 2016-11-30 Created: 2016-10-31 Last updated: 2016-12-06Bibliographically approved

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Gudmundsson, Jon Tomas
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