Digital Predistortion of Single and Concurrent Dual BandRadio Frequency GaN Amplifiers with Strong NonlinearMemory Effects
2016 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670Article in journal (Refereed) Submitted
Electrical anomalies due to trapping effects in Gallium Nitride (GaN) power amplifiers (PAs)give rise to long-term or strong memory effects. We propose novel models based on infinite impulse response (IIR) fixed pole expansion techniques for the behavioral modeling and digital pre-distortion of single-input-single-output (SISO) and concurrent dual-bandGaN PAs. Experimental results show that the proposed models outperform the corresponding finite impulse response (FIR) models by up to 17 dB for the same number of model parameters. For the linearization of a SISO GaN PA the proposed models give adjacent channel power ratios (ACPRs) that are 7 to 17 dBlower than the FIR models. For the concurrent dual-band case, the proposed models give ACPRs that are 9to 14 dB lower than the FIR models.
Place, publisher, year, edition, pages
IEEE Press, 2016.
IdentifiersURN: urn:nbn:se:kth:diva-197368OAI: oai:DiVA.org:kth-197368DiVA: diva2:1052016
QC 201612052016-12-052016-12-052016-12-05Bibliographically approved