A Comprehensive Study on the Geometrical Effects in High Power 4H-SiC BJTs
2016 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646Article in journal (Refereed) Published
Geometrical effects on the forward characteristics of high-power bipolar junction transistors are studied.An implantation-free area optimized junction termination is implemented in order to have a stable breakdown voltage. The effect of varying the emitter-base geometry, i.e., the emitter width (WE), the base width (WB), emitter contact–emitter edge distance (Wn), and base contact–emitter edge (Wp) on the on-state characteristics is studied in the different emitter cell geometries. The emitter size effect shows the highest influence on the current gain (β). It shows a significant effect on the β (single finger design, about 61%; square cell geometry, about 98%;hexagon cell geometry, about 90%). The base size effect also shows a significant improvement on the β of about 23% at a given WE.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-197700DOI: 10.1109/TED.2016.2631303OAI: oai:DiVA.org:kth-197700DiVA: diva2:1052927
QC 201612082016-12-072016-12-072016-12-09Bibliographically approved