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Wide Temperature Range Integrated Amplifier in Bipolar 4H-SiC Technology
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-3802-7834
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2016 (English)In: 2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), IEEE, 2016, 198-201 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper presents a high temperature integrated amplifier implemented in bipolar 4H-SiC technology. A 40 dB negative feedback voltage amplifier has been designed using the structured design method to overcome the temperature variation of device parameters. The amplifier performance degrades as the temperature increases from room temperature up to 500 degrees C. The measured gain is reduced from 39 dB at room temperature to 34 dB at 500 degrees C, and the 3-dB bandwidth decreases from 195 kHz to 100 kHz. The measured power-supply-rejection-ratio (PSRR) is reduced from -78 dB to -62 dB, while the output voltage swing decreases from 8 V to 7 V.

Place, publisher, year, edition, pages
IEEE, 2016. 198-201 p.
Series
Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-197021DOI: 10.1109/ESSDERC.2016.7599620ISI: 000386655900046Scopus ID: 2-s2.0-84994462160ISBN: 978-1-5090-2969-3 (print)OAI: oai:DiVA.org:kth-197021DiVA: diva2:1054806
Conference
46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND
Note

QC 20161209

Available from: 2016-12-09 Created: 2016-11-28 Last updated: 2017-09-05Bibliographically approved
In thesis
1. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
Open this publication in new window or tab >>High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology
2017 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. In fact, Si-based ICs have a limited maximum operating temperature which is around 300 °C for silicon on insulator (SOI). Owing to its superior material properties such as wide bandgap, three times larger than Silicon, and low intrinsic carrier concentration, SiC is an excellent candidate for high-temperature applications. In this thesis, analog and mixed-signal circuits have been implemented using SiC bipolar technology, including bandgap references, amplifiers, a master-slave comparator, an 8-bit R-2R ladder-based digital-to-analog converter (DAC), a 4-bit flash analog-to-digital converter (ADC), and a 10-bit successive-approximation-register (SAR) ADC. Spice models were developed at binned temperature points from room temperature to 500 °C, to simulate and predict the circuits’ behavior with temperature variation. The high-temperature performance of the fabricated chips has been investigated and verified over a wide temperature range from 25 °C to 500 °C. A stable gain of 39 dB was measured in the temperature range from 25 °C up to 500 °C for the inverting operational amplifier with ideal closed-loop gain of 40 dB. Although the circuit design in an immature SiC bipolar technology is challenging due to the low current gain of the transistors and lack of complete AC models, various circuit techniques have been applied to mitigate these problems. This thesis details the challenges faced and methods employed for device modeling, integrated circuit design, layout implementation and finally performance verification using on-wafer characterization of the fabricated SiC ICs over a wide temperature range.

Place, publisher, year, edition, pages
KTH Royal Institute of Technology, 2017. 107 p.
Series
TRITA-ICT, 2017:16
Keyword
silicon carbide (SiC), bipolar junction transistor (BJT), high temperature, SiC integrated circuit, Spice Gummel-Poon (SGP), operational amplifier (opamp), negative feedback amplifier, bandgap reference, masterslave comparator, digital-to-analog converter (DAC), analog-to-digital converter (ADC), flash ADC, successive approximation register (SAR) ADC
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-213697 (URN)978-91-7729-496-2 (ISBN)
Public defence
2017-09-29, Ka-Sal A (Sal Östen Mäkitalo), Kistagången 16, Kista, Stockholm, 13:00 (English)
Opponent
Supervisors
Funder
Swedish Foundation for Strategic Research
Note

QC 20170905

Available from: 2017-09-05 Created: 2017-09-05 Last updated: 2017-09-18Bibliographically approved

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