Wide Temperature Range Integrated Amplifier in Bipolar 4H-SiC Technology
2016 (English)In: 2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), IEEE, 2016, 198-201 p.Conference paper (Refereed)
This paper presents a high temperature integrated amplifier implemented in bipolar 4H-SiC technology. A 40 dB negative feedback voltage amplifier has been designed using the structured design method to overcome the temperature variation of device parameters. The amplifier performance degrades as the temperature increases from room temperature up to 500 degrees C. The measured gain is reduced from 39 dB at room temperature to 34 dB at 500 degrees C, and the 3-dB bandwidth decreases from 195 kHz to 100 kHz. The measured power-supply-rejection-ratio (PSRR) is reduced from -78 dB to -62 dB, while the output voltage swing decreases from 8 V to 7 V.
Place, publisher, year, edition, pages
IEEE, 2016. 198-201 p.
Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-197021DOI: 10.1109/ESSDERC.2016.7599620ISI: 000386655900046ScopusID: 2-s2.0-84994462160ISBN: 978-1-5090-2969-3OAI: oai:DiVA.org:kth-197021DiVA: diva2:1054806
46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND
QC 201612092016-12-092016-11-282016-12-09Bibliographically approved