Toward Effective Passivation of Graphene to Humidity Sensing Effects
2016 (English)In: 2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), IEEE, 2016, 299-302 p.Conference paper (Refereed)
Graphene has a number of remarkable properties which make it well suited for both transistor devices as well as for sensor devices such as humidity sensors. Previously, the humidity sensing properties of monolayer graphene on SiO2 substrates were examined - showing rapid response and recovery over a large humidity range. Further, the devices were fabricated in a CMOS compatible process which can be incorporated back end of the line (BEOL). We now present a way to selectively passivate graphene to suppress this humidity sensing effect. In this work, we experimentally and theoretically demonstrate effective passivation of graphene to humidity sensing - allowing for future integration with other passivated graphene devices on the same chip.
Place, publisher, year, edition, pages
IEEE, 2016. 299-302 p.
Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
Graphene, Sensors, Humidity, Passivation, DFT, BEOL, Integration
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-197022DOI: 10.1109/ESSDERC.2016.7599645ISI: 000386655900071ScopusID: 2-s2.0-84994429440ISBN: 978-1-5090-2969-3OAI: oai:DiVA.org:kth-197022DiVA: diva2:1054868
46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND
QC 201612092016-12-092016-11-282016-12-09Bibliographically approved