Humidity testing of SiC power MOSFETs
2016 (English)In: 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016, IEEE conference proceedings, 2016, 3131-3136 p.Conference paper (Refereed)
Humidity and outdoor application are a challenge for Silicon (Si) and Silicon Carbide (SiC) applications. This paper investigates the effect of humidity on SiC power MOSFET modules in a real application where no acceleration factors such as pressure or high temperature are applied. Since SiC devices can operate at higher temperature than Si, the high-temperature acceleration factor may be obsolete. Moreover, the humidity might be more critical when the temperature inside the converter enclosure and modules housing is varying with daily temperature variations and weather constraints in harsh environments. The breakdown voltages of the humidity-exposed modules are monitored regularly over a extended period of time in order to detect any increase of leakage current which indicates humidity-induced degradation. After 630 hours, the modules operated outdoor presented an increased leakage current at 1.2 kV and over the whole range of applied voltage.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2016. 3131-3136 p.
corrosion, failure analysis, humidity, multichip packaging, Power MOSFETs, reliability, Silicon Carbide (SiC), Atmospheric humidity, MOSFET devices, Motion control, Power control, Power electronics, Reliability analysis, Silicon, Silicon carbide, Soldered joints, Acceleration factors, Daily temperatures, Harsh environment, Induced degradation, Real applications, Silicon carbides (SiC), Power MOSFET
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-197148DOI: 10.1109/IPEMC.2016.7512796ScopusID: 2-s2.0-84983347998ISBN: 9781509012107OAI: oai:DiVA.org:kth-197148DiVA: diva2:1056003
8th IEEE International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016, 22 May 2016 through 26 May 2016
QC 201612132016-12-132016-11-302016-12-13Bibliographically approved