Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
2016 (English)In: 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016, IEEE conference proceedings, 2016, 3392-3397 p.Conference paper (Refereed)
The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a number of reasons, e.g. faulty semiconductor modules, faulty gate drivers (GDs), or electro-magnetic interference (EMI). Termination of such SCs is important in order to protect components and reduce the damage in the converter box. This paper presents a new short circuit protection scheme based on a universal current-source GD principle without dedicated hardware components. The performance of the design is evaluated for SC in the dc-link loop under load conditions, called type II and type III. Moreover, measurement results are presented using the proposed GD connected to a 1700 V 300 A SiC MOSFET tested during SC type II and III at two different dc-link stray inductances, 30 nH and 100 nH, and at two different temperatures, 25 °C and 125 °C. The conclusions are that the proposed scheme is able to terminate both SC type II and III with fast reaction time, with low energy dissipation, with a margin of about 15 times below the destructive level for dc-link voltages and load currents up to 1050 V and 300 A respectively.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2016. 3392-3397 p.
FPGA, Gate Drive, Short Circuit, SiC MOSFET, Energy dissipation, Field programmable gate arrays (FPGA), HVDC power transmission, Motion control, Power control, Power converters, Power electronics, Reconfigurable hardware, Short circuit currents, Silicon carbide, Wide band gap semiconductors, Gate drives, Low energy dissipations, Magnetic interference, Semiconductor modules, Short-circuit protection, Silicon carbide MOSFETs, Voltage source converters, MOSFET devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-197145DOI: 10.1109/IPEMC.2016.7512839ScopusID: 2-s2.0-84983341192ISBN: 9781509012107OAI: oai:DiVA.org:kth-197145DiVA: diva2:1056006
8th IEEE International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016, 22 May 2016 through 26 May 2016
QC 201612132016-12-132016-11-302016-12-13Bibliographically approved