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Dislocation dynamics modeling of plastic deformation in single-crystal copper at high strain rates
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.ORCID iD: 0000-0002-8494-3983
2016 (English)In: International Journal of Materials Research - Zeitschrift für Metallkunde, ISSN 1862-5282, E-ISSN 2195-8556, Vol. 107, no 11, 988-995 p.Article in journal (Refereed) Published
Abstract [en]

Tensile deformation of single-crystal copper along [001] orientation is modeled. Single crystal is deformed at three sets of high strain rates, ranging from 10(3) to 10(5) s(-1), using the three-dimensional dislocation dynamics technique to simulate dislocation microstructure evolution and the resultant macroscopic response. Two initial dislocation configurations consisting of straight dislocations and Frank-Read sources are randomly distributed over the simulation volume with an edge length of 1 mu m. For both initial setups, the mechanical response of the single crystal to the external loading demonstrates a considerable effect of strain rate. In addition, strain rate influences dislocation density evolution and consequently development of the dislocation microstructure. At all applied strain rates for both initial dislocation setups, dislocations evolve into a heterogeneous microstructure and this heterogeneity increases with plastic strain and strain rate.

Place, publisher, year, edition, pages
Carl Hanser Verlag GmbH, 2016. Vol. 107, no 11, 988-995 p.
Keyword [en]
Dislocation dynamics, Single-crystal copper, High strain rate deformation, Strain rate effect, Heterogeneous microstructure
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-197777DOI: 10.3139/146.111433ISI: 000387884000002ScopusID: 2-s2.0-84994479646OAI: oai:DiVA.org:kth-197777DiVA: diva2:1060237
Note

QC 20161228

Available from: 2016-12-28 Created: 2016-12-08 Last updated: 2016-12-28Bibliographically approved

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Delandar, Arash HosseinzadehSandström, Rolf
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