Analysis of Parasitic Elements of SiC Power Modules with Special Emphasis on Reliability Issues
2016 (English)In: 31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016, Institute of Electrical and Electronics Engineers (IEEE), 2016, 1018-1023 p.Conference paper (Refereed)
Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic elements have been extracted. The model is validated through experiments. An analysis of the impact of these parasitic elements on the gate-source voltage on the chip has been performed for both low switching speeds and high switching speeds. These results reveal potential reliability issues for the gate-oxide if higher switching speeds are targeted.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2016. 1018-1023 p.
, Annual IEEE Applied Power Electronics Conference and Exposition (APEC), ISSN 1048-2334
Silicon Carbide (SiC), MOSFET, Power Modules, Reliability, Multichip Modules
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-198911DOI: 10.1109/APEC.2016.7467995ISI: 000388127301026ScopusID: 2-s2.0-84973619427ISBN: 978-1-4673-9550-2OAI: oai:DiVA.org:kth-198911DiVA: diva2:1063030
31st Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2016, Long Beach Convention and Entertainment CenterLong Beach, United States, 20 March 2016 through 24 March 2016
QC 201701092017-01-092016-12-222017-01-09Bibliographically approved