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Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation
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2016 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 63, no 11, p. 4546-4549Article in journal (Refereed) Published
Abstract [en]

This brief explores the specific contact resistivity (rho(c)) of NiGe/n- and p-Ge contacts with and without carbon pregermanidation implantation. It is found that in the presence of carbon, not only the thermal stability of NiGe films is improved, but also the rho(c) of the NiGe/n- and p-Ge contacts is reduced remarkably due to enhanced phosphorus (P) and boron (B) dopant segregation (DS) at the NiGe/Ge interface after nickel germanidation. At 500 degrees C germanidation temperature, the.c values are reduced from 1.1 x 10(-4) Omega-cm(2) and 2.9 x 10(-5) Omega-cm(2) for NiGe/n- and p-Ge contacts without carbon to 7.3 x 10(-5) Omega-cm(2) and 1.4 x 10(-5) Omega-cm(2) for their counterparts with carbon, respectively.

Place, publisher, year, edition, pages
IEEE, 2016. Vol. 63, no 11, p. 4546-4549
Keywords [en]
Carbon implant, dopant segregation (DS), NiGe, specific contact resistivity
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-199550DOI: 10.1109/TED.2016.2610461ISI: 000389340400059Scopus ID: 2-s2.0-84990822378OAI: oai:DiVA.org:kth-199550DiVA, id: diva2:1065578
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QC 20170116

Available from: 2017-01-16 Created: 2017-01-09 Last updated: 2017-11-29Bibliographically approved

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