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550 degrees C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization
KTH, School of Information and Communication Technology (ICT), Elektronics.ORCID iD: 0000-0001-8854-7446
KTH, School of Information and Communication Technology (ICT), Elektronics, Integrated devices and circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Elektronics.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Elektronics.ORCID iD: 0000-0002-5845-3032
2016 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 37, no 12, p. 1594-1596Article in journal (Refereed) Published
Abstract [en]

The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 degrees C. Due to bandgap narrowing at higher temperatures, the photocurrent of the photodiode increases by 9 times at 365 nm and reduces by 2.6 times at 275 nm from RT to 550 degrees C. Moreover, a 4H-SiC p-i-n photodiode array has been fabricated. Each column and row of the array is separately connected by two-layer metallization.

Place, publisher, year, edition, pages
IEEE, 2016. Vol. 37, no 12, p. 1594-1596
Keywords [en]
4H-SiC, UV, photodiode, high temperature, two-layer metallization
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-199496DOI: 10.1109/LED.2016.2618122ISI: 000389332700016Scopus ID: 2-s2.0-85000786021OAI: oai:DiVA.org:kth-199496DiVA, id: diva2:1066492
Note

QC 20170118

Available from: 2017-01-18 Created: 2017-01-09 Last updated: 2017-11-29Bibliographically approved

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Hou, ShuobenHellström, Per-ErikZetterling, Carl-MikaelÖstling, Mikael
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