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Strong Absorption Enhancement in Si Nanorods
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0003-2562-0540
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0003-3833-9969
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2016 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 16, no 12, p. 7937-7941Article in journal (Refereed) Published
Abstract [en]

We report two orders of magnitude stronger absorption in silicon nanorods relative to bulk in a wide energy range. The local field enhancement and dipole matrix element contributions were disentangled experimentally by single-dot absorption measurements on differently shaped particles as a function of excitation polarization and photon energy. Both factors substantially contribute to the observed effect as supported by simulations of the light-matter interaction and atomistic calculations of the transition matrix elements. The results indicate strong shape dependence of the quasidirect transitions in silicon nanocrystals, suggesting nanostructure shape engineering as an efficient tool for overcoming limitations of indirect band gap materials in optoelectronic applications, such as solar cells.

Place, publisher, year, edition, pages
2016. Vol. 16, no 12, p. 7937-7941
Keywords [en]
Absorption, nanocrystals, nanorods, atomistic theory, silicon
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-199754DOI: 10.1021/acs.nanolett.6b04243ISI: 000389963200092Scopus ID: 2-s2.0-85006295240OAI: oai:DiVA.org:kth-199754DiVA, id: diva2:1067373
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QC 20170120

Available from: 2017-01-20 Created: 2017-01-16 Last updated: 2017-06-28Bibliographically approved

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Sychugov, IlyaSangghaleh, FatemehLinnros, Jan

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