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State of the art Power Switching Devices in SiC and their Applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-7510-9639
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2016 (English)In: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), IEEE, 2016, p. 122-123Conference paper, Published paper (Refereed)
Abstract [en]

This paper gives an overview of the current state of the art device technology for SiC discrete devices and applications. The superior switching performance is discusses as well as the energy efficiency of SiC devices. New emerging applications of SiC devices are also discussed focusing on high temperature capability such as integrated digital and analog circuits up to 600 C. Finally, MEMS and Bio applications will be briefly reviewed.

Place, publisher, year, edition, pages
IEEE, 2016. p. 122-123
Keywords [en]
Silicon Carbide, devices, Switch, transistor, low loss, high voltage, high temperature, SiC IC, SiC MEMS, Bio
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-200788DOI: 10.1109/SNW.2016.7578013ISI: 000391250500051Scopus ID: 2-s2.0-84994787716ISBN: 978-1-5090-0726-4 (print)OAI: oai:DiVA.org:kth-200788DiVA, id: diva2:1071239
Conference
IEEE Silicon Nanoelectronics Workshop (SNW), JUN 12-13, 2016, Honolulu, HI
Note

QC 20170203

Available from: 2017-02-03 Created: 2017-02-02 Last updated: 2017-02-03Bibliographically approved

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Authority records BETA

Salemi, ArashElahipanah, Hossein

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Östling, MikaelSalemi, ArashElahipanah, HosseinZetterling, Carl-Mikael
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