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Experimental Characterization of Enhancement Mode Gallium-Nitride Power Field-Effect Transistors at Cryogenic Temperatures
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0001-6184-6470
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2016 (English)In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, p. 129-134Conference paper, Published paper (Refereed)
Abstract [en]

High power density converters in combination with cryogenic power systems could have a significant impact on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. At - 195 degrees C, an 85 % reduction in on-state resistance, and a 16 % increase in threshold voltage were experimentally measured. Moreover, using a double-pulse test, no major changes in switching characteristics were observed. GaN transistors are thus excellent choices for operation at cryogenic temperatures.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2016. p. 129-134
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-201293DOI: 10.1109/WiPDA.2016.7799923ISI: 000392116100024Scopus ID: 2-s2.0-85010703094ISBN: 978-1-5090-1576-4 (print)OAI: oai:DiVA.org:kth-201293DiVA, id: diva2:1074045
Conference
4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR
Note

QC 20170214

Available from: 2017-02-14 Created: 2017-02-14 Last updated: 2017-02-14Bibliographically approved

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Colmenares, Juan

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