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Potential of Ultra-High Voltage Silicon Carbide Semiconductor Devices
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0001-9790-5524
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0001-5521-4135
KTH, School of Electrical Engineering (EES), Electric Power and Energy Systems.ORCID iD: 0000-0002-8565-4753
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2016 (English)In: 2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), IEEE conference proceedings, 2016, p. 253-258Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, the theoretical performance of ultra-high voltage Silicon Carbide (SiC) based devices are investigated. The SiC semiconductor device conduction power loss and switching power loss are predicted and compared with different modeling approaches, for SiC metal-oxide semiconductor field-effect transistors (MOSFETs) up to 20 kV and SiC gate turn-off (GTO) thyristors and SiC insulated-gate bipolar transistors (IGBTs) up to 50 kV. A parameter sensitivity analysis has been performed to observe the device power loss under various operating conditions, for instance current density, temperature and charge carrier lifetime. Also, the maximum allowed current density and maximum switching frequency for a maximum chip power dissipation limit of 300 W/cm(2) are investigated. The simulation results indicate that the SiC MOSFET has the highest current capability up to approximately 15 kV, while the SiC IGBT is suitable in the range of 15 kV to 35 kV, and thereafter the SiC GTO thyristor supersedes the loss performance from 35 kV to 50 kV.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2016. p. 253-258
Keywords [en]
Silicon Carbide, 4H-SiC, Ultra-High Voltage Device, SiC MOSFET, SiC GTO thyristor, SiC IGBT
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-201294DOI: 10.1109/WiPDA.2016.7799948ISI: 000392116100049Scopus ID: 2-s2.0-85010689215ISBN: 978-1-5090-1576-4 (print)OAI: oai:DiVA.org:kth-201294DiVA, id: diva2:1074047
Conference
4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), NOV 07-09, 2016, Fayetteville, AR
Note

QC 20170214

Available from: 2017-02-14 Created: 2017-02-14 Last updated: 2017-05-22Bibliographically approved

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Johannesson, DanielJacobs, KeijoNorrga, StaffanNee, Hans-Peter

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