Epitaxial growth of Ge strain relaxed buffer on Si with low threading dislocation density
2016 (English)In: ECS Transactions, Electrochemical Society, 2016, no 8, 615-621 p.Conference paper (Refereed)
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si substrate by reduced pressure chemical vapor deposition. The surface topography measured by AFM shows that the strain relaxation occurred through pit formation which resulted in freezing the defects at Ge/Si interface. Moreover a lower threading dislocation density compared to conventional strain relaxed Ge buffers on Si was observed. We show that by growing the first layer at temperatures below 300 °C a surface roughness below 1 nm can be achieved together with carrier mobility enhancement. The different defects densities revealed from SECCO and Iodine etching shows that the defects types have been changed and SECCO is not always trustable.
Place, publisher, year, edition, pages
Electrochemical Society, 2016. no 8, 615-621 p.
Chemical vapor deposition, Silicon, Silicon alloys, Strain relaxation, Surface defects, Surface roughness, Surface topography, Temperature, Defects density, Low-dislocation density, Low-temperature grown, Mobility enhancement, Reduced pressure chemical vapor deposition, Strain relaxed buffers, Strain-relaxed, Threading dislocation densities, Germanium
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-201995DOI: 10.1149/07508.0615ecstScopusID: 2-s2.0-84991585471ISBN: 9781607685395 OAI: oai:DiVA.org:kth-201995DiVA: diva2:1077049
Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, 2 October 2016 through 7 October 2016
QC 201702242017-02-242017-02-242017-02-24Bibliographically approved