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Epitaxial Lateral Overgrowth of GaxIn1-xP Towards Coherent GaxIn1-xP/Si Heterojunction by Hydride Vapor Phase Epitaxy
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0003-2562-0540
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2016 (English)In: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), IEEE, 2016Conference paper (Refereed)
Abstract [en]

Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

Place, publisher, year, edition, pages
IEEE, 2016.
Keyword [en]
epitaxial lateral overgrowth, corrugated epitaxial lateral overgrowth, III-V/Si heterojunction solar cells
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-202475DOI: 10.1109/ICIPRM.2016.7528828ISI: 000392285400311ScopusID: 2-s2.0-84992035477ISBN: 978-1-5090-1964-9 OAI: oai:DiVA.org:kth-202475DiVA: diva2:1078152
Conference
28th International Conference on Indium Phosphide & Related Materials (IPRM) / 43rd International Symposium on Compound Semiconductors (ISCS), JUN 26-30, 2016, Toyama, JAPAN
Funder
Swedish Energy Agency
Note

QC 20170302

Available from: 2017-03-02 Created: 2017-03-02 Last updated: 2017-03-02Bibliographically approved

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Omanakuttan, GiriprasanthStergiakis, StamoulisSahgal, AbhishekSychugov, IlyaLourdudoss, SebastianSun, Yan-Ting
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