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Extended defects in ZnO: Efficient sinks for point defects
KTH, School of Information and Communication Technology (ICT), Elektronics, Integrated devices and circuits.ORCID iD: 0000-0002-8760-1137
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2017 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 110, no 2, 022103Article in journal (Refereed) Published
Abstract [en]

Dopant-defect reactions dominate the defect formation in mono-crystalline ZnO samples implanted with Ag and B ions. This is in contrast to most other ion species studied and results in an enhanced concentration of extended defects, such as stacking faults and defect clusters. Using a combination of B and Ag implants and diffusion of residual Li atoms as a tracer, we demonstrate that extended defects in ZnO act as efficient traps for highly mobile Zn interstitials. The results imply that dynamic annealing involving interaction of point defects with extended ones can play a key role in the disorder saturation observed for ZnO and other radiation-hard semiconductors implanted with high doses.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017. Vol. 110, no 2, 022103
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Physical Sciences
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URN: urn:nbn:se:kth:diva-202434DOI: 10.1063/1.4973463ISI: 000392835300033Scopus ID: 2-s2.0-85009191857OAI: oai:DiVA.org:kth-202434DiVA: diva2:1078745
Note

QC 20170306

Available from: 2017-03-06 Created: 2017-03-06 Last updated: 2017-03-06Bibliographically approved

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