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Epitaxial lateral overgrowth of GaxIn1-xP towards coherent GaxIn1-xP/Si heterojunction by hydride vapor phase epitaxy
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0003-2562-0540
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2016 (English)In: 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, IEEE, 2016Conference paper (Refereed)
Abstract [en]

Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

Place, publisher, year, edition, pages
IEEE, 2016.
Keyword [en]
corrugated epitaxial lateral overgrowth, epitaxial lateral overgrowth, III-V/Si heterojunction solar cells, Heterojunctions, Hydrides, Semiconducting indium, Vapor phase epitaxy, Hetero interfaces, Heterojunction solar cells, Hydride vapor phase epitaxy, Epitaxial growth
National Category
Metallurgy and Metallic Materials
Identifiers
URN: urn:nbn:se:kth:diva-202175DOI: 10.1109/ICIPRM.2016.7528828ScopusID: 2-s2.0-84992035477ISBN: 9781509019649 OAI: oai:DiVA.org:kth-202175DiVA: diva2:1079144
Conference
2016 Compound Semiconductor Week, CSW 2016, 26 June 2016 through 30 June 2016
Note

QC 20170307

Available from: 2017-03-07 Created: 2017-03-07 Last updated: 2017-03-07Bibliographically approved

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Publisher's full textScopushttp://csw-jpn.org/

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Omanakuttan, GiriprasanthStergiakis, StamoulisSahgal, AbhishekSychugov, IlyaLourdudoss, SebastianSun, Yan-Ting
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