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Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-5007-6893
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2017 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 110, no 3, 031109Article in journal (Refereed) Published
Abstract [en]

Time-resolved scanning near-field photoluminescence (PL) spectroscopy was applied to map carrier lifetimes in wide m-plane InGaN/GaN quantum wells grown on on-axis and miscut substrates. Both radiative and nonradiative lifetimes were found to be spatially nonuniform. Lifetime variations were smaller for quantum wells grown on miscut, as compared to on-axis substrates. Correlation with surface topography showed that largest deviations of recombination times occur at +c planes of pyramidal hillocks of the on-axis sample. Observed correlation between radiative lifetimes and PL peak wavelength was assigned to a partial electron localization.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017. Vol. 110, no 3, 031109
Keyword [en]
Photoluminescence spectroscopy, Surface topography, Electron localizations, InGaN quantum wells, InGaN/GaN quantum well, Largest deviation, Non-radiative lifetimes, Radiative lifetime, Scanning near field microscopy, Time-resolved scanning, Semiconductor quantum wells
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-202216DOI: 10.1063/1.4974297ISI: 000392836900009Scopus ID: 2-s2.0-85009999442OAI: oai:DiVA.org:kth-202216DiVA: diva2:1082997
Note

Funding text: The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The work at UCSB was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC). QC 20170320

Available from: 2017-03-20 Created: 2017-03-20 Last updated: 2017-03-20Bibliographically approved

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Ivanov, R.Marcinkevičius, SauliusUŽdavinys, Tomas Kristijonas
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