Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
2017 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 110, no 3, 031109Article in journal (Refereed) Published
Time-resolved scanning near-field photoluminescence (PL) spectroscopy was applied to map carrier lifetimes in wide m-plane InGaN/GaN quantum wells grown on on-axis and miscut substrates. Both radiative and nonradiative lifetimes were found to be spatially nonuniform. Lifetime variations were smaller for quantum wells grown on miscut, as compared to on-axis substrates. Correlation with surface topography showed that largest deviations of recombination times occur at +c planes of pyramidal hillocks of the on-axis sample. Observed correlation between radiative lifetimes and PL peak wavelength was assigned to a partial electron localization.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2017. Vol. 110, no 3, 031109
Photoluminescence spectroscopy, Surface topography, Electron localizations, InGaN quantum wells, InGaN/GaN quantum well, Largest deviation, Non-radiative lifetimes, Radiative lifetime, Scanning near field microscopy, Time-resolved scanning, Semiconductor quantum wells
IdentifiersURN: urn:nbn:se:kth:diva-202216DOI: 10.1063/1.4974297ISI: 000392836900009ScopusID: 2-s2.0-85009999442OAI: oai:DiVA.org:kth-202216DiVA: diva2:1082997
Funding text: The research at KTH was performed within the frame of Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT) and was financially supported by the Swedish Energy Agency (Contract No. 36652-1) and the Swedish Research Council (Contract No. 621-2013-4096). The work at UCSB was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC). QC 201703202017-03-202017-03-202017-03-20Bibliographically approved