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Probing silicon quantum dots by single-dot techniques
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0003-2562-0540
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-5260-5322
2017 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 28, no 7, 072002Article in journal (Refereed) Published
Abstract [en]

Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2017. Vol. 28, no 7, 072002
Keyword [en]
lifetime, ligands, luminescence, porous silicon, silicon nanocrystal, single-dot, spectroscopy, Energy gap, Heavy metals, Nanocrystals, Optical waveguides, Photoluminescence spectroscopy, Semiconductor quantum dots, Silicon, Electrical measurement, Fabrication method, Individual nanoparticles, Silicon nanocrystals, Silicon quantum dots, Spectral diffusion
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-202221DOI: 10.1088/1361-6528/aa542bISI: 000393910000001ScopusID: 2-s2.0-85010383003OAI: oai:DiVA.org:kth-202221DiVA: diva2:1083000
Note

QC 20170320

Available from: 2017-03-20 Created: 2017-03-20 Last updated: 2017-03-20Bibliographically approved

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  • apa
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