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Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module
ABB Corporate Research.ORCID iD: 0000-0001-9790-5524
ABB Corporate Research.
2014 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The characteristics of a 1200 V and 800 A bipolar junction transistor (BJT) power module has been measured, simulated and verified for the first time in the PSPICE platform. The simulation model is based on a silicon carbide (SiC) Gummel-Poon model for high power applications. The implemented model has been extended with temperature dependent equations in order to extend the BJT operating temperature range. PSPICE simulations are performed to extract technology dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014.
Keyword [en]
4H-SiC; 4H-SiC BJT; Device modeling; Device simulation; PSPICE; Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-203940DOI: 10.4028/www.scientific.net/MSF.821-823.830Scopus ID: 2-s2.0-84950335743OAI: oai:DiVA.org:kth-203940DiVA: diva2:1083145
Conference
European Conference on Silicon Carbide & Related Materials (ECSCRM)
Note

QC 20170410

Available from: 2017-03-20 Created: 2017-03-20 Last updated: 2017-04-10Bibliographically approved

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