Development of a PSpice Model for SiC MOSFET Power Modules
2015 (English)Conference paper (Refereed)
In this paper, the static and dynamic characteristics of a 1200 V and 120 A silicon carbide (SiC) MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. Experimental measurements and PSpice simulations are performed to extract the technology dependent modeling parameters. The model is implemented in the PSpice circuit simulation platform using both standard components and analog behavior modeling (ABM) blocks. The simulation results of the model is fairly accurate and correlates well with the measured results over a wide temperature range. The developed model is used to facilitate converter design at cell level and hence predict and optimize the cell performance (i.e., energy losses) with varying circuit parameters (e.g., stray inductances, temperatures, gate resistances etc.,).
Place, publisher, year, edition, pages
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-203941DOI: 10.4028/www.scientific.net/MSF.858.1074OAI: oai:DiVA.org:kth-203941DiVA: diva2:1083146
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015