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Development of a PSpice Model for SiC MOSFET Power Modules
ABB Corporate Research.ORCID iD: 0000-0001-9790-5524
ABB Corporate Research.
2015 (English)Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, the static and dynamic characteristics of a 1200 V and 120 A silicon carbide (SiC) MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. Experimental measurements and PSpice simulations are performed to extract the technology dependent modeling parameters. The model is implemented in the PSpice circuit simulation platform using both standard components and analog behavior modeling (ABM) blocks. The simulation results of the model is fairly accurate and correlates well with the measured results over a wide temperature range. The developed model is used to facilitate converter design at cell level and hence predict and optimize the cell performance (i.e., energy losses) with varying circuit parameters (e.g., stray inductances, temperatures, gate resistances etc.,).

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015.
Keyword [en]
4H-SiC; Device modeling; Device simulation; PSpice; SiC MOSFET; Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-203941DOI: 10.4028/www.scientific.net/MSF.858.1074Scopus ID: 2-s2.0-84971568411OAI: oai:DiVA.org:kth-203941DiVA: diva2:1083146
Conference
16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
Note

QC 20170410

Available from: 2017-03-20 Created: 2017-03-20 Last updated: 2017-04-10Bibliographically approved

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