Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules
ABB Corporate Research.ORCID iD: 0000-0001-9790-5524
ABB Corporate Research.
2016 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 31, no 6, 4517-4525 p.Article in journal (Refereed) Published
Abstract [en]

A simple analytical Spice-type model has been developed and verified for the first time for 4H-SiC-based bipolar junction transistor (BJT) power module with voltage and current rating of 1200 V and 800 A. The simulation model is based on a temperature-dependent silicon carbide (SiC) Gummel-Poon model for high-power applications. PSpice simulations are performed to extract technology-dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. Influence of various circuit elements, for instance, stray inductance and base resistance and internal device modeling parameters, carrier life time, and emitter doping, on switching losses has been studied. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.

Place, publisher, year, edition, pages
IEEE Press, 2016. Vol. 31, no 6, 4517-4525 p.
Keyword [en]
Device modeling; device simulation; 4H-SiC; 4H-SiC BJT; PSpice; silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-203954DOI: 10.1109/TPEL.2015.2477477ISI: 000368453300049Scopus ID: 2-s2.0-84962428098OAI: oai:DiVA.org:kth-203954DiVA: diva2:1083245
Note

QC 20170410

Available from: 2017-03-20 Created: 2017-03-20 Last updated: 2017-04-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Johannesson, Daniel
In the same journal
IEEE transactions on power electronics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

Altmetric score

Total: 16 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf