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Graphene Base Transistors With Bilayer Tunnel Barriers: Performance Evaluation and Design Guidelines
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
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2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 2, 593-598 p.Article in journal (Refereed) Published
Abstract [en]

Graphene-based capacitors and Graphene base transistors (GBTs) featuring innovative engineered tunnel barriers are characterized in DC and the data are thoroughly analyzed by means of an electrical model and a Monte Carlo transport simulator. Followingmodel calibra-tion on experiments, we then propose strategies to improve the DC common-base current gain and the cutoff frequency of GBTs. The DC and RF performance of optimized GBT structures based on realistic technology data are analyzed in detail to highlight advantages and potential limits of this device concept.

Place, publisher, year, edition, pages
IEEE Press, 2017. Vol. 64, no 2, 593-598 p.
Keyword [en]
Analog RF devices, graphene-based devices, modeling
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:kth:diva-204096DOI: 10.1109/TED.2016.2636447ISI: 000394691600037Scopus ID: 2-s2.0-85008429711OAI: oai:DiVA.org:kth-204096DiVA: diva2:1085419
Note

QC 20170329

Available from: 2017-03-29 Created: 2017-03-29 Last updated: 2017-03-29Bibliographically approved

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