Graphene Base Transistors With Bilayer Tunnel Barriers: Performance Evaluation and Design Guidelines
2017 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 64, no 2, 593-598 p.Article in journal (Refereed) Published
Graphene-based capacitors and Graphene base transistors (GBTs) featuring innovative engineered tunnel barriers are characterized in DC and the data are thoroughly analyzed by means of an electrical model and a Monte Carlo transport simulator. Followingmodel calibra-tion on experiments, we then propose strategies to improve the DC common-base current gain and the cutoff frequency of GBTs. The DC and RF performance of optimized GBT structures based on realistic technology data are analyzed in detail to highlight advantages and potential limits of this device concept.
Place, publisher, year, edition, pages
IEEE Press, 2017. Vol. 64, no 2, 593-598 p.
Analog RF devices, graphene-based devices, modeling
Computer and Information Science
IdentifiersURN: urn:nbn:se:kth:diva-204096DOI: 10.1109/TED.2016.2636447ISI: 000394691600037ScopusID: 2-s2.0-85008429711OAI: oai:DiVA.org:kth-204096DiVA: diva2:1085419
QC 201703292017-03-292017-03-292017-03-29Bibliographically approved