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Ionized Physical Vapor Deposition (IPVD): A Review of Technology and Applications
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2006 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 513, 1-24 p.Article in journal (Refereed) Published
Abstract [en]

In plasma-based deposition processing, the importance of low-energy ion bombardment during thin film growth can hardly be exaggerated. Ion bombardment is an important physical tool available to materials scientists in the design of new materials and new structures. Glow discharges and in particular, the magnetron sputtering discharge have the advantage that the ions of the discharge are abundantly available to the deposition process. However, the ion chemistry is usually dominated by the ions of the inert sputtering gas while ions of the sputtered material are rare. Over the last few years, various ionized sputtering techniques have appeared that can achieve a high degree of ionization of the sputtered atoms, often up to 50% but in some cases as much as approximately 90%. This opens a complete new perspective in the engineering and design of new thin film materials. The development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed. The application of a secondary discharge, inductively coupled plasma magnetron sputtering (ICP-MS) and microwave amplified magnetron sputtering, is discussed as well as the high power impulse magnetron sputtering (HIPIMS), the self-sustained sputtering (SSS) magnetron, and the hollow cathode magnetron (HCM) sputtering discharges. Furthermore, filtered arc-deposition is discussed due to its importance as an IPVD technique. Examples of the importance of the IPVD-techniques for growth of thin films with improved adhesion, improved microstructures, improved coverage of complex shaped substrates, and increased reactivity with higher deposition rate in reactive processes are reviewed.

Place, publisher, year, edition, pages
2006. Vol. 513, 1-24 p.
National Category
Physical Sciences
Research subject
Materials Science and Engineering
Identifiers
URN: urn:nbn:se:kth:diva-204855DOI: 10.1016/j.tsf.2006.03.033ISI: 000238963600001Scopus ID: 2-s2.0-33746937174OAI: oai:DiVA.org:kth-204855DiVA: diva2:1086303
Note

QC 20170407

Available from: 2017-03-31 Created: 2017-03-31 Last updated: 2017-04-07Bibliographically approved

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