The high power impulse magnetron sputtering discharge as an ionized physical vapor deposition tool
2010 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 84, no 12, 1360-1364 p.Article in journal (Refereed) Published
Various magnetron sputtering tools have been developed that provide a high degree of ionization of the sputtered vapor referred to as ionized physical vapor deposition (IPVD). The ions can be controlled with respect to energy and direction as they arrive to the growth surface which allows for increased control of film properties during growth. Here, the design parameters for IPVD systems are briefly reviewed. The first sputter based IPVD systems utilized a secondary plasma source between the target and the substrate in order to generate a highly ionized sputtered vapor. High power impulse magnetron sputtering (HiPIMS) is a recent sputtering technique that utilizes IPVD where a high density plasma is created by applying high power pulses at low frequency and low duty cycle to a magnetron sputtering device. A summary of the key experimental findings for the HiPIMS discharge is given. Measurements of the temporal and spatial behavior of the plasma parameters indicate electron density peak, that expands from the target with a fixed velocity. The discharge develops from an inert sputtering gas dominated to a sputtered vapor dominated during the pulse. The high electron density results in a high degree of ionization of the deposition material.
Place, publisher, year, edition, pages
Elsevier, 2010. Vol. 84, no 12, 1360-1364 p.
Ionized physical vapor deposition (IPVD); High power impulse magnetron sputtering discharge (HiPIMS); Sputtering; Plasma parameters
Engineering and Technology
Research subject Physics
IdentifiersURN: urn:nbn:se:kth:diva-204859DOI: 10.1016/j.vacuum.2009.12.022ISI: 000279943700003ScopusID: 2-s2.0-77956448048OAI: oai:DiVA.org:kth-204859DiVA: diva2:1086308
QC 201704182017-03-312017-03-312017-04-18Bibliographically approved